Radiation hard, non-volatile memory is very important for all DoD space and strategic systems. The memory that is currently deployed is heavy, bulky, and very low density; requires an enormous amount of power; and is very costly. The Spin Transport Electronics (Spintronics) Program sought to develop magnetic memory and magnetic sensors based on the Giant Magneto-Resistance and Spin Dependent Tunneling effects in multiplayer sandwiches of magnetic and non-magnetic materials. This program made significant progress in developing non-volatile radiation hard, random access, high-speed, low-power, high-density magnetic memory expected to fulfill DoD’s requirements as well as compete with mainstream volatile and non-volatile semiconductor memories including Flash, DRAM, and SRAM. This memory will enable “instant on” and “instant off” portable computing as well as allow the development of robust system-on-a-chip wireless communication systems. The Spintronics Program also produced magnetic sensors that will be utilized for perimeter defense and unexploded ordnance detection as well as in electronic isolators and switches.