Ctrl-P to Print

Semiconductor AlGaN Injection Lasers (SAIL)

The US military has a pressing requirement for compact, reliable, and cost-effective detection of bio-agents. Semiconductor lasers, with their intrinsic high brightness and power, will enable stand-off detection applications, such as bioLIDAR, and will greatly enhance point-detection of aerosolized bio-agents.

This program will demonstrate semiconductor injection lasers based on heterostructures of aluminum gallium nitride (AlGaN). In addition to demonstrating the laser performance in terms of threshold current density, operating voltage, and power output, the Semiconductor AlGaN Injection Lasers (SAIL) program will concentrate on reliability assurance and will produce lasers with stable operating characteristics. The emission wavelengths of interest are 340 nm and 280 nm.

This program will demonstrate semiconductor injection lasers based on heterostructures of AlGaN.

The SAIL program will be conducted in three phases. Phase I will demonstrate feasibility of 340 nm lasers operating at room temperature under pulsed conditions. Stimulated emission will be also demonstrated for 280 nm structures. Phase II will produce lasers operating CW, at room temperature, at 340 nm and demonstrate a lifetime of at least 100 hours. Pulsed operation of 280 nm lasers, at room temperature, will be also demonstrated in Phase II. Phase III will focus on obtaining improved power output at both wavelengths and demonstrating longer term stability, at least 1000 and 100 hours at 340 nm and 280 nm, respectively.