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Wide Bandgap Semiconductors Technology Initiative (WBGS-RF)
Program Manager: Dr. Mark Rosker
The Wide Bandgap Semiconductor Technology Initiative (WBGS-RF) will enable new RF applications and capabilities through the development and exploitation of the material, device, and circuit properties of wide bandgap semiconductors. Specific goals include the demonstration of: (a) > 100 mm semi-insulating, high quality substrates (Phase I); (b) epitaxial material technologies with better than μ1% composition, thickness, and doping control (Phase I); (c) robust RF/analog devices with Ft > 150 GHz (Phase II); (d) microwave and mm-wave circuit demonstrations (3-35 GHz) (Phase III); and (e) high power (> 1KW/cm2) electronic integration assemblies (Phase III).