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Spin Torque Transfer-Random Access Memory (STT-RAM)
Program Manager and PoC: Dr. Devanand Shenoy
Document Type: Presolicitation Notice
Solicitation Number: BAA08-16
Posted Date: Feb 26, 2008
Original Response Date: Apr 11, 2008
Current Response Date: Apr 11, 2008
Original Archive Date: Mar 12, 2009
Current Archive Date: Mar 12, 2009
Classification Code: A -- Research & Development
Naics Code: 541712 -- Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
Description
DARPA is soliciting innovative research and development (R&D) proposals in the area of Spin-Torque Transfer Random Access Memory technologies. The goal of this program is to develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating "universal" memory elements. A universal memory element is one that exhibits scalability for high capacity of storage per unit volume, as well as high read/write speed, compatibility with CMOS processes, and non-volatility. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice.
Prior research in micro-magnetics and spintronics has led to the exploitation of giant magnetoresistance (GMR) effects for rotating magnetic disk drive memories, as well as magnetic tunneling junctions (MTJ) for magnetic random access memory (MRAM). The spin-torque transfer (STT) effect is a recent discovery that exploits magnetic spin states to electrically change the magnetic orientation of a material (Science 285, 867 (1999)). Components based on the STT effect can have the properties of a universal memory, high density, high speed, non-volatility, high endurance, and can also be well suited for harsh environments such as those with exposure to ionizing radiation. In addition, they can operate from a single power supply voltage level greatly simplifying associated circuitry.
This program is aimed at developing the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.
All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA08-16@darpa.mil.
Full BAA is attached.
Point of Contact
Devanand Shenoy, Program Manager, MTO,
Phone 571-218-4932, Fax 703-696-2206,
Email Devanand.Shenoy@darpa.mil
Michael Blackstone, Contracting Officer,
Phone 571-218-4804, Fax 703-696-2208,
Email michael.blackstone@darpa.mil